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N-Channel Enhancement Mode Field Effect Transistor FEATURES
25V, 60A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 13m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED75A3/CEU75A3
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 25
Units V V A A W W/ C mJ A C
20
60 200 56 0.37 60 11 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 2.7 50 Units C/W C/W
Specification and data are subject to change without notice . 1
Rev 3. 2008. Jan. http://www.cetsemi.com
CED75A3/CEU75A3
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A 0.85 VDS = 15V, ID = 20A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 12 4 32 6 10 3.6 2.9 60 1.2 25 10 65 15 13 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 10V, ID = 15A VDS = 15V, VGS = 0V, f = 1.0 MHz 12 1180 270 145 S pF pF pF BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) VGS = 0V, ID = 250A VDS = 25V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 30A VGS = 4.5V, ID = 30A 1 7 10 25 1 100 -100 3 9 13 V
A
Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA V m m
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 1mH, IAS = 11A, VDD = 50V, RG = 25, Starting TJ = 25 C
2
CED75A3/CEU75A3
100 VGS=10,8,6,4V 100
ID, Drain Current (A)
60
ID, Drain Current (A)
80
80
60
VGS=3V
40
40 25 C 20 TJ=125 C -55 C 3 4 5
20
0 0 1 2 3 4
0 0 1 2
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1800 1500 1200 900 600 300 0 0 5 10 Coss Crss 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=30A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
2
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250A
IS, Source-drain current (A)
10
10
1
10 -25 0 25 50 75 100 125 150
0
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CED75A3/CEU75A3
VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=15V ID=20A 10
3
RDS(ON)Limit
ID, Drain Current (A)
10
2
10ms 100ms 1ms DC
10
1
0
4
8
12
16
20
10
0
TC=25 C TJ=175 C Single Pulse 10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4

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